Proposes building superconducting devices — wires, Josephson junctions, SQUIDs, and qubits — entirely within a silicon or germanium single crystal using precision hole-doping at the atomic scale. The heavily doped regions become superconducting, and the undoped semiconductor acts as the tunnel barrier. This “bottom-up” approach unifies superconducting and semiconductor device fabrication in a single crystal. It is a materials precursor relevant to crystalline merged-element devices, but it did not propose the merged-element transmon architecture itself.

Key Results

  • Superconductivity from precision hole doping in Si or Ge
  • Reported literature values include K for heavily boron-doped Si
  • Josephson junctions from doped-undoped-doped regions in single crystal
  • SQUIDs and qubits feasible with atomistic fabrication (STM lithography)
  • Motivates merging semiconductor and superconducting qubit technologies