Qubit Zoo

Bottom-up superconducting and Josephson junction devices inside a group-IV semiconductor

1 min read

Proposes building superconducting devices — wires, Josephson junctions, SQUIDs, and qubits — entirely within a silicon or germanium single crystal using precision hole-doping at the atomic scale. The heavily doped regions become superconducting, and the undoped semiconductor acts as the tunnel barrier. This “bottom-up” approach unifies superconducting and semiconductor qubits in a single crystal, founding the merge-mon concept.

Key Results

  • Superconductivity from precision hole doping in Si or Ge
  • Critical temperature ~1 K for dense boron doping in Si
  • Josephson junctions from doped-undoped-doped regions in single crystal
  • SQUIDs and qubits feasible with atomistic fabrication (STM lithography)
  • Motivates merging semiconductor and superconducting qubit technologies

Graph View

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