Industry-compatible silicon spin-qubit unit cells exceeding 99% fidelity

This paper reports a 300 mm foundry-fabricated silicon spin-qubit unit cell with more than 99% fidelity in all operations and SPAM fidelity above 99.9%, showing that high-fidelity gate-defined spin qubits survive transition to industrial CMOS-compatible fabrication.

Key Results

• 300 mm foundry-fabricated silicon spin-qubit unit cell
• All operations exceed 99% fidelity
• SPAM fidelity exceeds 99.9%
• Reported lifetimes/coherence up to $T_1=6.3\mathrm{s}$, $T_2^{\ast }=30.4\mu \mathrm{s}$, and $T_{2,\mathrm{Hahn}}=803\mu \mathrm{s}$ in the verified arXiv title-page abstract

Links

• Journal: Nature
• arXiv: 2410.15590

Zoo Links

• loss-divincenzo-qubit
• silicon-spin-qubit
• spin-qubit