Demonstrates a single-electron spin qubit in isotopically enriched ²⁸Si MOS with gate fidelity exceeding the surface code threshold. T₂* reaches 120 μs — a 100× improvement over GaAs — vindicating the isotopic purification strategy for silicon qubits.
Key Results
- Single-qubit gate fidelity: 99.6%
- T₂* = 120 μs (²⁸Si MOS, vs ~1 μs in GaAs)
- T₂ (Hahn echo): 28 ms
- Platform: single electron in ²⁸Si MOS quantum dot
Links
- Journal: Nature Nanotechnology
- arXiv: 1407.1950