Demonstrates a single-electron spin qubit in isotopically enriched ²⁸Si MOS with gate fidelity exceeding the surface code threshold. T₂* reaches 120 μs — a 100× improvement over GaAs — vindicating the isotopic purification strategy for silicon qubits.

Key Results

  • Single-qubit gate fidelity: 99.6%
  • T₂* = 120 μs (²⁸Si MOS, vs ~1 μs in GaAs)
  • T₂ (Hahn echo): 28 ms
  • Platform: single electron in ²⁸Si MOS quantum dot