Tanttu et al. 2024 — Assessment of the errors of high-fidelity two-qubit gates in silicon quantum dots

Citation

T. Tanttu et al., “Assessment of the errors of high-fidelity two-qubit gates in silicon quantum dots,” Nature Physics 20, 1804–1809 (2024) · arXiv:2303.04090.

Key Results

• Demonstrated repeatable above-99% two-qubit operation in multiple SiMOS devices
• Reported an average interleaved-randomized-benchmarking fidelity of 99.17% across three devices
• Traced important errors to slow nuclear and electrical noise plus sequence-dependent contextual noise

Linked Entries

• spin-qubit
• silicon-spin-qubit