Demonstrates micrometer-scale Al/AlOₓ/Al merged-element transmons using long oxidations and novel processing. Mean values were typically 10–90 μs, with selected annealed devices exceeding 100 μs for several hours. The authors conclude that conventional small-junction transmon relaxation is not limited by junction loss; the merged geometry itself still requires careful accounting of barrier and surface participation.

Key Results

  • : 10–90 μs (up to μs with annealing)
  • Micrometer-scale overlap junctions with long oxidation
  • Low subgap conduction indicates a high-quality tunnel barrier
  • Constrains junction loss in conventional small-junction transmons