Demonstrates micrometer-scale Al/AlOₓ/Al merged-element transmons using long oxidations and novel processing. Mean values were typically 10–90 μs, with selected annealed devices exceeding 100 μs for several hours. The authors conclude that conventional small-junction transmon relaxation is not limited by junction loss; the merged geometry itself still requires careful accounting of barrier and surface participation.
Key Results
- : 10–90 μs (up to μs with annealing)
- Micrometer-scale overlap junctions with long oxidation
- Low subgap conduction indicates a high-quality tunnel barrier
- Constrains junction loss in conventional small-junction transmons
Links
- Journal: Physical Review Applied
- arXiv: 2103.09163