Coupling between a Si/SiGe Resonant Exchange Qubit and a High-Impedance Microwave Resonator

This paper reports strong coupling between a Si/SiGe resonant-exchange qubit and a high-impedance microwave resonator, establishing a modern silicon RX milestone and quantifying the role of charge noise in the cavity-coupled device.

Key Results

• Strong coupling between a Si/SiGe RX qubit and a high-impedance microwave resonator
• Spin-photon coupling rate $g/2\pi =65.8$ MHz
• Qubit decoherence rate $\gamma /2\pi =21.4$ MHz
• Detuning-dependent analysis identifies charge noise as the dominant decoherence source

Links

• Journal: Physical Review Letters

Zoo Links

• rx-qubit
• silicon-spin-qubit