Demonstrates a gatemon qubit based on a proximitized InAs/Al two-dimensional electron gas (2DEG) Josephson junction, with voltage-tunable frequency. Extends the gatemon concept from nanowire to planar geometries, improving reproducibility and scalability.
Key Results
- Voltage-tunable qubit frequency (4–8 GHz range)
- T₁ ~ 1 μs, T₂* ~ 0.3 μs (early device)
- Planar 2DEG junction (vs nanowire in original gatemon)
- Compatible with standard lithographic fabrication
Links
- Journal: Nature Nanotechnology
- arXiv: 1802.02627