Demonstrates a gatemon qubit based on a proximitized InAs/Al two-dimensional electron gas (2DEG) Josephson junction, with voltage-tunable frequency. Extends the gatemon concept from nanowire to planar geometries, improving reproducibility and scalability.

Key Results

  • Voltage-tunable qubit frequency (4–8 GHz range)
  • T₁ ~ 1 μs, T₂* ~ 0.3 μs (early device)
  • Planar 2DEG junction (vs nanowire in original gatemon)
  • Compatible with standard lithographic fabrication