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Photoelectrical detection and characterization of divacancy and PL5–PL7 spins in silicon carbide

Photoelectrical detection and characterization of divacancy and PL5–PL7 spins in silicon carbide

Jan 01, 20261 min read

Demonstrated room-temperature coherent photoelectrical detection of PL3 divacancy and PL5–PL7 spins, establishing an electrical alternative to near-infrared optical readout.

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  • Journal: Physical Review B
  • arXiv: 2512.05283

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  • silicon-carbide-defect-qubit

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  • Silicon-Carbide Defect Qubit

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