First optical observation and characterization of individual T-center defects in silicon photonic structures. Demonstrates spin-dependent optical transitions at telecom wavelength (1326 nm) for individually addressable qubits. This establishes the T center as a viable spin-photon interface platform in silicon, combining telecom-compatible photon emission with long-lived spin coherence.

Key Results

  • Individual T centers resolved in silicon photonic crystal cavities
  • Spin-dependent telecom-band (O-band, 1326 nm) optical transitions
  • Electron spin coherence ~ms in isotopically enriched ²⁸Si
  • Nuclear spin registers (¹³C, ¹H) provide quantum memory
  • Silicon-native: compatible with existing photonic integrated circuit fabrication